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DIODES INC.  BC858B-7-F  Bipolar (BJT) Single Transistor, PNP, -30 V, 200 MHz, 300 mW, -100 mA, 330 hFE

DIODES INC. BC858B-7-F
Technical Data Sheet (354.14KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-30V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
300mW
DC Collector Current:
-100mA
DC Current Gain hFE:
330hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000006

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