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DIODES INC.  FZT651  Bipolar (BJT) Single Transistor, NPN, 60 V, 175 MHz, 2 W, 3 A, 200 hFE

DIODES INC. FZT651
Technical Data Sheet (495.49KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and "Green" moulding compound, terminals are matte tin finish.
  • Automotive grade AEC-Q101 qualified
  • UL recognized
  • Current gain bandwidth of 175MHz
  • Power dissipation (Pd) of 2W
  • Continuous collector current of 3A
  • Collector to emitter breakdown voltage of 60V
  • Collector emitter saturation voltage Vce(sat) of 600mV at 3A collector current
  • Operating temperature range -55°C to 150°C

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
175MHz
Power Dissipation Pd:
2W
DC Collector Current:
3A
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00012

Associated Products