DIODES INC.  FZT849  Bipolar (BJT) Single Transistor, NPN, 30 V, 100 MHz, 3 W, 7 A, 200 hFE

Technical Data Sheet (60.52KB) EN See all Technical Docs

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Product Overview

The FZT849 is a 30V NPN Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208.
  • High continuous collector current
  • Very low saturation voltage
  • Complementary PNP type FZT949
  • AEC-Q101 qualified
  • UL94V-0 Flammability rating
ESD sensitive device, take proper precaution while handling the device.


Product Information

Automotive Qualification Standard:
Collector Emitter Voltage V(br)ceo:
30 V
DC Collector Current:
7 A
DC Current Gain hFE:
200 hFE
MSL 1 - Unlimited
No. of Pins:
4 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
3 W
Product Range:
No SVHC (17-Dec-2015)
Transistor Case Style:
Transistor Polarity:
Transition Frequency ft:
100 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:

Country in which last significant manufacturing process was carried out

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  • Power Dissipation Pd: 3W
  • DC Collector Current: 7A
  • Collector Emitter Voltage V(br)ceo: 30V
  • Transition Frequency ft: 100MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: NPN
  • DC Current Gain hFE: 200hFE
  • No. of Pins: 4Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-223