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DIODES INC.  MMST5401-7-F  Bipolar (BJT) Single Transistor, PNP, -150 V, 300 MHz, 200 mW, -200 mA, 60 hFE

DIODES INC. MMST5401-7-F
Technical Data Sheet (180.95KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-150V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
200mW
DC Collector Current:
-200mA
DC Current Gain hFE:
60hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000053