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DIODES INC.  ZTX753  Bipolar (BJT) Single Transistor, General Purpose, PNP, -100 V, 140 MHz, 1 W, -2 A, 100 hFE

DIODES INC. ZTX753
Technical Data Sheet (65.12KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZTX753 from Diode Inc is a through hole, PNP silicon planar medium power transistor in E-line (TO-92 compatible) package.
  • Automotive grade AEC-Q101 qualified
  • Collector to emitter Voltage (Vce) of -100V
  • Collector to base voltage of -120V
  • Power dissipation (Pd) of 1W
  • Continuous collector current of -2A
  • Collector to emitter breakdown voltage of -100V at -10mA collector current
  • Collector to emitter saturation voltage Vce(sat) of -300mV at -1A collector current
  • Operating temperature range -55°C to 200°C

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-100V
Transition Frequency ft:
140MHz
Power Dissipation Pd:
1W
DC Collector Current:
-2A
DC Current Gain hFE:
100hFE
Transistor Case Style:
E-Line
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0002

Associated Products