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DIODES INC.  ZVN3310A  MOSFET Transistor, N Channel, 200 mA, 100 V, 10 ohm, 10 V, 2.4 V

DIODES INC. ZVN3310A
Technical Data Sheet (83.99KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10R resistance and 625mW power dissipation.

 

Product Information

Automotive Qualification Standard:
-
Continuous Drain Current Id:
200 mA
Drain Source Voltage Vds:
100 V
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
On Resistance Rds(on):
10 ohm
Operating Temperature Max:
150 °C
Power Dissipation Pd:
625 mW
Product Range:
-
Rds(on) Test Voltage Vgs:
10 V
SVHC:
No SVHC (17-Dec-2015)
Threshold Voltage Vgs:
2.4 V
Transistor Case Style:
TO-226AA
Transistor Polarity:
N Channel

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000163

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

  • Power Dissipation Pd: 625mW
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 200mA
  • Transistor Polarity: N Channel
  • No. of Pins: 3Pins
  • Threshold Voltage Vgs: 2.4V
  • Product Range: -
  • Automotive Qualification Standard: -
  • Drain Source Voltage Vds: 100V
  • Rds(on) Test Voltage Vgs: 10V
  • Transistor Case Style: TO-226AA
  • On Resistance Rds(on): 10ohm