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DIODES INC.  ZVN3310F  MOSFET Transistor, N Channel, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V

DIODES INC. ZVN3310F
Technical Data Sheet (174.98KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This transistor features UL94V-0 rated case and solderable as per MIL-STD-202, method 208 matte tin finish lead frame (lead free plating) terminals. This MOSFET is suitable for general purpose applications. it is complementary to ZVP3310F type transistor.
  • High pulse current handling in linear mode
  • Low input capacitance
  • Fast switching speed

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100mA
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
10ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
330mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033