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DIODES INC.  ZXM61N03F  MOSFET Transistor, N Channel, 1.4 A, 30 V, 220 mohm, 10 V, 1 V

DIODES INC. ZXM61N03F
Technical Data Sheet (188.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage and current applications.
  • Low on resistance
  • Low gate threshold voltage
  • Fast switching speed
  • AEC-Q101 Qualified

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.4A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.22ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
625mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033

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