Low

FAIRCHILD SEMICONDUCTOR  FJP13009H2TU  Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 100 W, 12 A, 8

FAIRCHILD SEMICONDUCTOR FJP13009H2TU
Technical Data Sheet (220.12KB) EN Technical Data Sheet (312.29KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
  • High voltage capability
  • High switching speed
  • 700V Collector-base voltage
  • 9V Emitter-base voltage
  • 6A Base current

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
4MHz
Power Dissipation Pd:
100W
DC Collector Current:
12A
DC Current Gain hFE:
8hFE
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Lighting;
  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00204