Low

INTEGRATED SILICON SOLUTION (ISSI)  IS42VM16160K-75BLI  SDRAM, 256MBIT, 133MHZ, BGA-54

INTEGRATED SILICON SOLUTION (ISSI) IS42VM16160K-75BLI
Manufacturer Part No:
IS42VM16160K-75BLI
Order Code:
2409137
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IS42VM16160K-75BLI is a 268435456-bit CMOS Mobile Synchronous DRAM organized as 4 banks of 4194304 words x 16-bit. This is offering fully synchronous operation and is referenced to a positive edge of the clock. All inputs and outputs are synchronized w...
  • JEDEC standard 3.3/2.5/1.8V power supply
  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 8K Refresh cycle/64ms
  • Programmable CAS Latency - 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst read single write operation
  • Special function support
  • Programmable driver strength control
  • Deep power down mode
  • Speed - 7.5ns

Product Information

DRAM Memory Configuration:
16M x 16bit
Access Time:
7.5ns
Page Size:
-
No. of Pins:
54Pins
Memory Case Style:
BGA
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
IC Interface Type:
LVCMOS
Packaging:
Cut Tape
MSL:
MSL 3 - 168 hours
Product Range:
-
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Computers & Computer Peripherals;
  • Industrial;
  • Communications & Networking;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423231
Weight (kg):
.001

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.