Low

INTEGRATED SILICON SOLUTION (ISSI)  IS43TR16128B-15HBLI  SDRAM, DDR3, 2GB, 1333MT/S, FBGA-96

INTEGRATED SILICON SOLUTION (ISSI) IS43TR16128B-15HBLI
Technical Data Sheet (439.96KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IS43TR16128B-15HBLI is a 128Mx16 DDR3 SDRAM with 1333MT/s data rate. For application flexibility, various functions, features and modes are programmable in four mode registers, provided by the DDR3 SDRAM, as user defined variables and they must be programmed via a Mode Register Set (MRS) command. As the default values of the Mode Registers (MR#) are not defined, contents of Mode Registers must be fully initialized and/or re-initialized, i.e. written, after power up and/or reset for proper operation. Also the contents of the Mode Registers can be altered by re-executing the MRS command during normal operation. When programming the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset do not affect array contents, which means these commands can be executed any time after power-up without affecting the array contents.
  • VDD and VDDQ = 1.5V ±0.075V Standard Voltage
  • VDD and VDDQ = 1.35V + 0.1V, -0.067V low voltage (L), backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066MHz
  • 8 Internal banks for concurrent operation
  • 8n-bit prefetch architecture
  • Programmable CAS latency
  • Programmable additive latency - 0, CL-1, CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable burst length - 4 and 8
  • Sequential or interleave programmable burst sequence
  • BL switch on the fly
  • Auto Self Refresh (ASR)
  • Self refresh temperature (SRT)
  • Partial array self refresh
  • Asynchronous RESET pin
  • TDQS (termination data strobe) supported (x8 only)
  • OCD (Off-Chip Driver impedance adjustment)
  • Dynamic ODT (On-Die Termination)
  • RZQ/7, RZQ/6 (RZQ = 240R) Driver strength
  • Write levelling

 

Product Information

DRAM Memory Configuration:
128M x 16bit
Access Time:
13.5ns
Page Size:
16Kbit
No. of Pins:
96Pins
Memory Case Style:
FBGA
Operating Temperature Min:
-40°C
Operating Temperature Max:
95°C
IC Interface Type:
-
Packaging:
Cut Tape
MSL:
MSL 3 - 168 hours
Product Range:
-
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Commercial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85423239
Weight (kg):
.001

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.