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INFINEON  IRFR5305TRPBF  MOSFET Transistor, P Channel, -31 A, -55 V, 65 mohm, -10 V, -4 V

INFINEON IRFR5305TRPBF
Technical Data Sheet (244.12KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
  • Ultra low on-resistance
  • Advanced process technology
  • Fully avalanche rated

 

Product Information

Automotive Qualification Standard:
-
Continuous Drain Current Id:
-31 A
Drain Source Voltage Vds:
-55 V
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
On Resistance Rds(on):
0.065 ohm
Operating Temperature Max:
175 °C
Power Dissipation Pd:
110 W
Product Range:
-
Rds(on) Test Voltage Vgs:
-10 V
SVHC:
No SVHC (17-Dec-2015)
Threshold Voltage Vgs:
-4 V
Transistor Case Style:
TO-252AA
Transistor Polarity:
P Channel

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00023

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  • Power Dissipation Pd: 110W
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: -31A
  • Transistor Polarity: P Channel
  • No. of Pins: 3Pins
  • Threshold Voltage Vgs: -4V
  • Product Range: -
  • Automotive Qualification Standard: -
  • Drain Source Voltage Vds: -55V
  • Rds(on) Test Voltage Vgs: -10V
  • Transistor Case Style: TO-252AA
  • On Resistance Rds(on): 0.065ohm