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INFINEON  IRLB4030PBF  MOSFET Transistor, N Channel, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V

INFINEON IRLB4030PBF
Technical Data Sheet (280.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
  • Optimized for logic level drive
  • Very low RDS (ON) at 4.5V VGS
  • Superior R*Q at 4.5V VGS
  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
110A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0034ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
370W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002