Low

IXYS SEMICONDUCTOR  IXTN21N100  Power MOSFET, N Channel, 21 A, 1 kV, 550 mohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR IXTN21N100
Technical Data Sheet (137.17KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
21A
Drain Source Voltage Vds:
1kV
On Resistance Rds(on):
0.55ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4.5V
Power Dissipation Pd:
520W
Transistor Case Style:
ISOTOP
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000036