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NXP  BFG21W,115  Bipolar - RF Transistor, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE

NXP BFG21W,115
Technical Data Sheet (217.50KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BFG21W,115 is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.
  • High power gain
  • High efficiency

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
4.5V
Transition Frequency ft:
18GHz
Power Dissipation Pd:
600mW
DC Collector Current:
500mA
DC Current Gain hFE:
40hFE
RF Transistor Case:
SOT-343R
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000006