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NXP  BSH114,215  MOSFET Transistor, N Channel, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V

NXP BSH114,215
Technical Data Sheet (287.28KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSH114,215 is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
  • 150°C Junction temperature
  • Low conduction losses

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
500mA
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
830mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

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