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NXP  PBSS4160DPN,115  Bipolar - RF Power Transistor, 220 MHz, 500 hFE, 1 A

NXP PBSS4160DPN,115
Technical Data Sheet (258.83KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Power Dissipation Pd:
420mW
No. of Pins:
6 Pin
Noise Figure Typ:
-
Continuous Collector Current Ic:
1 A
MSL:
MSL 1 - Unlimited
Product Range:
-
Transition Frequency ft:
220 MHz
Collector Emitter Voltage V(br)ceo:
60 V
SVHC:
No SVHC (17-Dec-2015)
DC Current Gain hFE:
500 hFE
RF Transistor Case:
SOT-457
Operating Frequency Min:
-

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

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