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NXP  PBSS5160U  Bipolar (BJT) Single Transistor, PNP, -60 V, 185 MHz, 250 mW, -1 A, 350 hFE

NXP PBSS5160U
Technical Data Sheet (127.47KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
185MHz
Power Dissipation Pd:
250mW
DC Collector Current:
-1A
DC Current Gain hFE:
350hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000179