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NXP  PDTA123EE,115  Bipolar (BJT) Single Transistor, BRT, PNP, -50 V, 150 mW, -100 mA, 30 hFE

NXP PDTA123EE,115
Technical Data Sheet (183.07KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Transition Frequency ft:
-
Power Dissipation Pd:
150mW
DC Collector Current:
-100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-416
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006