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NXP  PDTC115EE,115  Bipolar (BJT) Single Transistor, BRT, NPN, 50 V, 150 mW, 100 mA, 80 hFE

NXP PDTC115EE,115
Technical Data Sheet (182.27KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
-
Power Dissipation Pd:
150mW
DC Collector Current:
100mA
DC Current Gain hFE:
80hFE
Transistor Case Style:
SOT-416
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

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