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NXP  PDTC123JE,115  Bipolar (BJT) Single Transistor, BRT, NPN, 50 V, 230 MHz, 150 mW, 100 mA, 100 hFE

NXP PDTC123JE,115
Technical Data Sheet (716.63KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
230MHz
Power Dissipation Pd:
150mW
DC Collector Current:
100mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-416
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006