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NXP  PHN210T,118  Dual MOSFET, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

NXP PHN210T,118
Technical Data Sheet (313.62KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
2.2A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.08ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Thailand

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000454

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