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NXP  PHT6NQ10T  MOSFET Transistor, N Channel, 3 A, 100 V, 90 mohm, 10 V, 3 V

NXP PHT6NQ10T
Technical Data Sheet (78.56KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PHT6NQ10T is a 100V standard level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and higher operating power due to low thermal resistance. Suitable for use in DC to DC converters, motor and relay drivers applications.
  • 150°C Junction temperature
  • Suitable for high frequency applications due to fast switching characteristics

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.09ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
8.3W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000197