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ON SEMICONDUCTOR  MJD112T4G  Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 20 W, 2 A, 12 hFE

ON SEMICONDUCTOR MJD112T4G
Technical Data Sheet (148.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
25MHz
Power Dissipation Pd:
20W
DC Collector Current:
2A
DC Current Gain hFE:
12hFE
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000562

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