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ON SEMICONDUCTOR  MJD210T4G  Bipolar (BJT) Single Transistor, General Purpose, PNP, -25 V, 65 MHz, 1.4 W, -5 A, 70 hFE

ON SEMICONDUCTOR MJD210T4G
Technical Data Sheet (146.21KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-25V
Transition Frequency ft:
65MHz
Power Dissipation Pd:
1.4W
DC Collector Current:
-5A
DC Current Gain hFE:
70hFE
Transistor Case Style:
TO-252
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (20-Jun-2016)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Vietnam

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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