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ON SEMICONDUCTOR  MJD350T4G  Bipolar (BJT) Single Transistor, General Purpose, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE

ON SEMICONDUCTOR MJD350T4G
Technical Data Sheet (87.37KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-300V
Transition Frequency ft:
10MHz
Power Dissipation Pd:
15W
DC Collector Current:
-500mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
TO-252
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE

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