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ON SEMICONDUCTOR  MJD45H11T4G  Bipolar (BJT) Single Transistor, PNP, -80 V, 90 MHz, 20 W, -8 A, 60 hFE

ON SEMICONDUCTOR MJD45H11T4G
Manufacturer Part No:
MJD45H11T4G
Order Code:
2441288
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
90MHz
Power Dissipation Pd:
20W
DC Collector Current:
-8A
DC Current Gain hFE:
60hFE
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (12-Jan-2017)

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Legislation and Environmental

Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000473

Alternatives

Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE

ON SEMICONDUCTOR

Awaiting Delivery (Available for backorder to lead times shown)

Price for: Each (Supplied on Full Reel)

1800+ S$0.404 3600+ S$0.384 5400+ S$0.366

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