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ON SEMICONDUCTOR  MJD45H11T4G  Bipolar (BJT) Single Transistor, PNP, -80 V, 90 MHz, 20 W, -8 A, 60 hFE

ON SEMICONDUCTOR MJD45H11T4G
Technical Data Sheet (90.51KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
90MHz
Power Dissipation Pd:
20W
DC Collector Current:
-8A
DC Current Gain hFE:
60hFE
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000473

Alternatives

Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE

ON SEMICONDUCTOR

Awaiting Delivery (Available for backorder to lead times shown)

Price for: Each (Supplied on Full Reel)

1800+ S$0.393 3600+ S$0.373 5400+ S$0.355

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