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ON SEMICONDUCTOR  MJE13003G  Bipolar (BJT) Single Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE

ON SEMICONDUCTOR MJE13003G
Technical Data Sheet (107.46KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
10MHz
Power Dissipation Pd:
1.4W
DC Collector Current:
1.5A
DC Current Gain hFE:
4hFE
Transistor Case Style:
TO-126
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00064

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