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ON SEMICONDUCTOR  MMBT3906WT1G  Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

ON SEMICONDUCTOR MMBT3906WT1G
Technical Data Sheet (128.53KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
150mW
DC Collector Current:
200mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SC-70
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

Alternatives

Bipolar (BJT) Single Transistor, General Purpose, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 30 hFE

ON SEMICONDUCTOR

Reel
60,000 in stock

Price for: Each (Supplied on Full Reel)

3000+ S$0.0221 15000+ S$0.0181 30000+ S$0.0151

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