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ON SEMICONDUCTOR  MMBT489LT1G  Bipolar (BJT) Single Transistor, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE

ON SEMICONDUCTOR MMBT489LT1G
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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
310mW
DC Collector Current:
1A
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE

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