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ON SEMICONDUCTOR  MMBT589LT1G  Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 hFE

ON SEMICONDUCTOR MMBT589LT1G
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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-30V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
310mW
DC Collector Current:
-1A
DC Current Gain hFE:
40hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 hFE

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