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ON SEMICONDUCTOR  MMBT918LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 15 V, 600 MHz, 225 mW, 50 mA, 20 hFE

ON SEMICONDUCTOR MMBT918LT1G
Technical Data Sheet (113.26KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
600MHz
Power Dissipation Pd:
225mW
DC Collector Current:
50mA
DC Current Gain hFE:
20hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 15 V, 600 MHz, 225 mW, 50 mA, 20 hFE

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