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ON SEMICONDUCTOR  MMBTH10LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 650 MHz, 225 mW, 4 mA, 60 hFE

ON SEMICONDUCTOR MMBTH10LT1G
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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
25V
Transition Frequency ft:
650MHz
Power Dissipation Pd:
225mW
DC Collector Current:
4mA
DC Current Gain hFE:
60hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001