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ON SEMICONDUCTOR  NSS60600MZ4T1G  Bipolar (BJT) Single Transistor, PNP, -60 V, 100 MHz, 2 W, -6 A, 150 hFE

ON SEMICONDUCTOR NSS60600MZ4T1G
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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
2W
DC Collector Current:
-6A
DC Current Gain hFE:
150hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001