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SEMIKRON  SKM40GD123D  IGBT Array & Module Transistor, N Channel, 40 A, 3.3 V, 200 W, 1.2 kV, SEMITRANS 6

SEMIKRON SKM40GD123D
Technical Data Sheet (710.73KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
N Channel
DC Collector Current:
40A
Collector Emitter Saturation Voltage Vce(on):
3.3V
Power Dissipation Pd:
200W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
SEMITRANS 6
No. of Pins:
-
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85415000
Weight (kg):
.29

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IGBT Array & Module Transistor, N Channel, 22 A, 3 V, 145 W, 1.2 kV, SEMITRANS 6

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