Low

STMICROELECTRONICS  STB13NM60N  Power MOSFET, N Channel, 11 A, 600 V, 0.28 ohm, 10 V, 3 V

STMICROELECTRONICS STB13NM60N
Technical Data Sheet (1.13MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Continuous Drain Current Id:
11 A
Drain Source Voltage Vds:
600 V
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
On Resistance Rds(on):
0.28 ohm
Operating Temperature Max:
150 °C
Power Dissipation Pd:
90 W
Product Range:
-
Rds(on) Test Voltage Vgs:
10 V
SVHC:
No SVHC (17-Dec-2015)
Threshold Voltage Vgs:
3 V
Transistor Case Style:
TO-263
Transistor Polarity:
N Channel

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00499

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

  • Power Dissipation Pd: 90W
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 11A
  • Transistor Polarity: N Channel
  • No. of Pins: 3Pins
  • Threshold Voltage Vgs: 3V
  • Product Range: -
  • Drain Source Voltage Vds: 600V
  • Rds(on) Test Voltage Vgs: 10V
  • Transistor Case Style: TO-263
  • On Resistance Rds(on): 0.28ohm