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VISHAY  SI4446DY-T1-GE3  N CH MOSFET

VISHAY SI4446DY-T1-GE3
Technical Data Sheet (118.82KB) EN See all Technical Docs

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Product Information

Continuous Drain Current Id:
3.9 A
Drain Source Voltage Vds:
40 V
MSL:
MSL 1 - Unlimited
No. of Pins:
8 Pins
On Resistance Rds(on):
0.033 ohm
Operating Temperature Max:
150 °C
Power Dissipation Pd:
1.1 W
Rds(on) Test Voltage Vgs:
10 V
SVHC:
To Be Advised
Threshold Voltage Vgs:
1.6 V
Transistor Case Style:
SOIC
Transistor Polarity:
N Channel

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
0

Similar Products

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  • Drain Source Voltage Vds: 40V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 1.1W
  • Threshold Voltage Vgs: 1.6V
  • Rds(on) Test Voltage Vgs: 10V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 3.9A
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.033ohm