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VISHAY  SI4446DY-T1-GE3  N CH MOSFET

VISHAY SI4446DY-T1-GE3
Technical Data Sheet (118.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3.9A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.033ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.6V
Power Dissipation Pd:
1.1W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
Automotive Qualification Standard:
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
0

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