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VISHAY  SI4922BDY-T1-E3.  DUAL N CHANNEL MOSFET, 30V, SOIC

VISHAY SI4922BDY-T1-E3.
Technical Data Sheet (249.05KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0135ohm
Rds(on) Test Voltage Vgs:
12V
Threshold Voltage Vgs:
1.8V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000388

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