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MAX22700EASA+

Gate Driver, 1 Channels, High Side and Low Side, GaN HEMT, SiC MOSFET, 8 Pins, NSOIC

MAXIM INTEGRATED PRODUCTS MAX22700EASA+
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Manufacturer Part No:
MAX22700EASA+
Order Code:
3642952
Technical Datasheet:
MAX22700EASA+   Datasheet
See all Technical Docs

Product Overview

Single-channel isolated gate driver with ultra-high common-mode transient immunity (CMTI) of 300KV/µs (typ). The devices is designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications with different output gate-drive circuitry and B-side supply voltages. It features variants with output options for gate driver common pin GNDB. Devices has integrated digital galvanic isolation using Maxim's proprietary process technology. Also features isolation for a withstand voltage rating of 3KVRMS (narrow SOIC package) for 60 seconds. It supports a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The MAX22700 has a maximum RDSON of 1.25ohm for the low-side driver. It has a maximum RDSON of 4.5ohm for the high side driver. Applications include isolated gate driver for inverters, motor drives, UPS and PV Inverters.
  • High CMTI (300KV/µs, typ)
  • Robust galvanic isolation
  • Withstands ±5KV surge between GNDA and VSSB with 1.2/50µs waveform
  • Precision UVLO
  • Single ended input

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
1Channels

:
High Side and Low Side

:
GaN HEMT, SiC MOSFET

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8Pins

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NSOIC

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Inverting, Non-Inverting

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-

:
-

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3V

:
5.5V

:
-40°C

:
125°C

:
35ns

:
35ns

:
-

:
MSL 3 - 168 hours
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Technical Docs (1)

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