You have entered a value in the highlighted fields below that contain invalid characters. Please revise your selection using valid characters only.

Product may not be an exact match for your search

You previously purchased this product. View in Order History

 
 

LF398N/NOPB .

Sample and Hold Amplifier, 1 Amplifier, 1 MHz, 20 µs, 2 mV, DIP, 8 Pins

TEXAS INSTRUMENTS LF398N/NOPB .

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
LF398N/NOPB .
Order Code:
2496205

Alternatives for LF398N/NOPB .

Compare Selected (0) Show all similar products
Manufacturer Part Number
Order Code
Manufacturer / Description
Availability
Price (Incl GST)
Quantity

Product Overview

The LF398N/NOPB is a monolithic Sample-and-Hold Circuit uses BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF198-N to be included inside the feedback loop of 1MHz operational amplifiers without having stability problems. Input impedance of 10¹⁰R allows high-source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5mV/minute with a 1µF hold capacitor. The JFETs have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities.
  • Low input offset
  • Low output noise in hold mode
  • Input characteristics do not change during hold mode
  • High supply rejection ratio in sample or hold
  • Wide bandwidth
  • Logic input compatible with TTL, PMOS and CMOS
  • 0.5mV Typical hold step at 0.01µF
  • 0.002% Gain accuracy
  • 500mW Power dissipation
  • ±15V Supply voltage

Applications

Industrial

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Product Information

Want to see similar products? Simply select your required attributes below and hit the button ×


:
1 Amplifier

:
1MHz

:
20µs

:
2mV

:
DIP

:
8Pins

:
± 5V to ± 18V

:
-

:
0°C

:
70°C

:
-

:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Technical Docs (0)

No Longer Stocked

S$2.47 ( S$2.64  Inc. GST)

Pricing is unavailable. Please contact customer services.

Price for:
Each
Multiple: 1 Minimum: 1
Quantity Price (Incl GST) Your Price (Incl GST)
 
 
1+ S$2.47 (S$2.64)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
10+ S$2.23 (S$2.39)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
25+ S$2.11 (S$2.26)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
100+ S$1.69 (S$1.81)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
250+ S$1.47 (S$1.57)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
500+ S$1.43 (S$1.53)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
1000+ S$1.14 (S$1.22)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
2500+ S$1.10 (S$1.18)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
5000+ S$1.06 (S$1.13)
Promotional price
Contract Price
Web only price
Web only contract price
  ( )
 
 

Pricing is unavailable. Please contact customer services.

No longer stocked:: No Longer Manufactured::
Add to Basket Add to Basket Pre-Order
Add
Restricted Item
Enter Your Part No/Line Note
Total Price:
Total Price: ( )
Total Price: --