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IMDQ75R007M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 222 A, 750 V, 6100 µohm, HDSOP
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ManufacturerINFINEON
Manufacturer Part NoIMDQ75R007M2HXTMA1
Order Code
Re-Reel4733915RL
Cut Tape4733915
Product RangeCoolSiC G2 Series
Your Part Number
Available to Order
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$45.940 | S$45.94 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$45.940 (S$50.0746) |
| 5+ | S$39.830 (S$43.4147) |
| 10+ | S$33.710 (S$36.7439) |
| 50+ | S$33.420 (S$36.4278) |
| 100+ | S$33.120 (S$36.1008) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMDQ75R007M2HXTMA1
Order Code
Re-Reel4733915RL
Cut Tape4733915
Product RangeCoolSiC G2 Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id222A
Drain Source Voltage Vds750V
Drain Source On State Resistance6100µohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation789W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMDQ75R007M2HXTMA1 is a CoolSiC™ MOSFET 750V Generation 2 (G2) in Q-DPAK package. It offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1 (G1), it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7mohm makes it ideal for static switching applications like eFuse and solid-state circuit breakers.
- 6.8mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
222A
Drain Source On State Resistance
6100µohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
750V
Transistor Case Style
HDSOP
Rds(on) Test Voltage
20V
Power Dissipation
789W
Product Range
CoolSiC G2 Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001