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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=4440µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (inc GST) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+ S$425.780(S$464.1002) 5+ S$381.670(S$416.0203) | Half Bridge | Dual N Channel | 190A | 1.2kV | 4440µohm | Module | 7Pins | 18V | 5.1V | 175°C | 62 mm C Series | ||||||
Each | 1+ S$446.980(S$487.2082) 5+ S$419.350(S$457.0915) | Half Bridge | Dual N Channel | 220A | 1.2kV | 4440µohm | Module | 7Pins | 18V | 5.1V | 175°C | 62 mm C Series | ||||||
