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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (inc GST) | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+ S$702.180(S$765.3762) | Half Bridge | N Channel | 87A | 1.2kV | 0.025ohm | Module | 20Pins | 20V | 2.3V | 337W | 150°C | ||||||
Each | 1+ S$1,303.940(S$1,421.2946) | Half Bridge | Dual N Channel | 404A | 1.2kV | 5000µohm | Module | - | 20V | 2.3V | 1.66kW | 150°C | ||||||
