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2N7002A-7
Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | 2N7002A-7Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | Full Reel3127561 Re-Reel3127180RL Cut Tape3127180 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.162 | S$0.81 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.162 (S$0.1766) |
| 50+ | S$0.152 (S$0.1657) |
| 100+ | S$0.141 (S$0.1537) |
| 500+ | S$0.097 (S$0.1057) |
| 1500+ | S$0.096 (S$0.1046) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.071 (S$0.0774) |
| 9000+ | S$0.070 (S$0.0763) |
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Product Information
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | 2N7002A-7Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | Full Reel3127561 Re-Reel3127180RL Cut Tape3127180 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 180mA |
| Drain Source On State Resistance | 6ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 5V |
| Gate Source Threshold Voltage Max | 2V |
| Power Dissipation | 370mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface mount package
- ESD protected gate, 1.2kV HBM, 1kV CDM
- Drain-source voltage is 60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current (10µs pulse, duty cycle=1%) is 800mA at TA=+25°C
- Static drain-source on-resistance is 3.5ohm typ at VGS=5.0V, ID=0.115A, TJ=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 180mA |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 5V |
| Power Dissipation | 370mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 6ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 2V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000002 |