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DMN2310U-7
Power MOSFET, N Channel, 20 V, 1.6 A, 0.175 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN2310U-7Copy |
| Manufacturer Standard Lead Time | 64 weeks |
| Order Code | Re-Reel3405174RL Cut Tape3405174 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.207 | S$1.04 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.207 (S$0.2256) |
| 50+ | S$0.182 (S$0.1984) |
| 100+ | S$0.157 (S$0.1711) |
| 500+ | S$0.135 (S$0.1472) |
| 1500+ | S$0.133 (S$0.145) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN2310U-7Copy |
| Manufacturer Standard Lead Time | 64 weeks |
| Order Code | Re-Reel3405174RL Cut Tape3405174 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.175ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Gate Source Threshold Voltage Max | 950mV |
| Power Dissipation | 480mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
DMN2310U-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications and load switches.
- Low gate threshold voltage
- Fast switching speed, ESD protected gate
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±8V at TA = +25°C
- Continuous drain current is 1.6A at TA = +25°C, VGS = 4.5V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 4.8A at TA = +25°C
- Total power dissipation is 0.48W at TA = +25°C
- Maximum continuous body diode forward current is 0.82A at TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 1.6A |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 4.5V |
| Power Dissipation | 480mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 20V |
|---|---|
| Drain Source On State Resistance | 0.175ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 950mV |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0002 |