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DMN3009LFVWQ-7
Power MOSFET, N Channel, 30 V, 60 A, 3500 µohm, PowerDI 3333, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN3009LFVWQ-7Copy |
| Manufacturer Standard Lead Time | 43 weeks |
| Order Code | Re-Reel3405176RL Cut Tape3405176 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$0.839 | S$0.84 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$0.839 (S$0.9145) |
| 10+ | S$0.755 (S$0.823) |
| 100+ | S$0.711 (S$0.775) |
| 500+ | S$0.660 (S$0.7194) |
| 1000+ | S$0.615 (S$0.6704) |
| 5000+ | S$0.603 (S$0.6573) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN3009LFVWQ-7Copy |
| Manufacturer Standard Lead Time | 43 weeks |
| Order Code | Re-Reel3405176RL Cut Tape3405176 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 3500µohm |
| Transistor Case Style | PowerDI 3333 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.5V |
| Power Dissipation | 1W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | AEC-Q101 |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
DMN3009LFVWQ-7 is a 30V N-channel enhancement mode MOSFET in a 8 pin PowerDI3333 package. This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in backlighting, power management functions and DC-DC converters.
- 5.0mohm at VGS = 10V maximum RDS(on)
- Low RDS(ON) ensures on state losses are minimized
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- 100% UIS test in production – ensures more reliable and robust end application
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 60A |
| Transistor Case Style | PowerDI 3333 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 1W |
| Operating Temperature Max | 150°C |
| Qualification | AEC-Q101 |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 3500µohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 2.5V |
| No. of Pins | 8Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0002 |