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DMN6075S-7
Power MOSFET, N Channel, 60 V, 2 A, 0.085 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN6075S-7Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | Full Reel4318528 Re-Reel3127343RL Cut Tape3127343 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.395 | S$1.98 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.395 (S$0.4306) |
| 50+ | S$0.370 (S$0.4033) |
| 100+ | S$0.345 (S$0.376) |
| 500+ | S$0.280 (S$0.3052) |
| 1500+ | S$0.275 (S$0.2998) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.153 (S$0.1668) |
| 9000+ | S$0.150 (S$0.1635) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | DIODES INC. |
|---|---|
| Manufacturer Part No | DMN6075S-7Copy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | Full Reel4318528 Re-Reel3127343RL Cut Tape3127343 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.085ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 800mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
DMN6075S-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters.
- Low input capacitance, low on-resistance
- Fast switching speed
- Drain-source voltage is 60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 2A at TA=+25°C, VGS = 10V, steady state
- Maximum body diode forward current is 2A at TA = +25°C
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 12A at TA = +25°C
- Static drain-source on-resistance is 85mohm max at VGS = 10V, ID = 3.2A, TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 2A |
| Transistor Case Style | SOT-23 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 800mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 0.085ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000635 |