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DIJ2A7N90
Power MOSFET, N Channel, 900 V, 2.7 A, 3.4 ohm, ITO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$2.810 (S$3.0629) |
| 10+ | S$1.410 (S$1.5369) |
| 100+ | S$1.190 (S$1.2971) |
| 500+ | S$0.914 (S$0.9963) |
| 1000+ | S$0.796 (S$0.8676) |
| 5000+ | S$0.703 (S$0.7663) |
Price for:Each
Minimum: 1
Multiple: 1
S$2.81 (S$3.06 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIOTEC SEMICONDUCTOR
Manufacturer Part NoDIJ2A7N90Copy
Order Code4871690
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id2.7A
Drain Source On State Resistance3.4ohm
Transistor Case StyleITO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation65.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (05-Nov-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.7A
Transistor Case Style
ITO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
900V
Drain Source On State Resistance
3.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (05-Nov-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (05-Nov-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001