Wide Bandgap Devices for a Greener Future
Infineon Technologies offers a wide range of semiconductor solutions used for industrial power control and power management ICs, LED drivers, sensors, chip card and security products, and various other applications.
A full-GaN solution for high-power density chargers and adapters
Wide Band Gap (WBG) semiconductor materials enable new approaches to increase power density. At high switching frequencies, GaN HEMTs for synchronous rectifier (SR) switches have the advantages of lower charges and faster switching transitions. This paper presents the methodology of using GaN HEMTs for SR in USB-C PD charger and adapter designs. An overview and comparison of the charger & adapter topologies and the synchronous rectification characteristics are discussed. In additional , Infineon’s 65 W Full Gan ACF converter Evaluation Board are introduced.
Gate drive solutions for CoolGaN™ GIT HEMTs
This paper explains the gate drive requirements for Infineon’s CoolGaN™ gate injection transistor (GIT) technology based on a hybrid-drain high electron mobility transistor (HEMT) with a p-GaN gate. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated EiceDRIVER™ gate driver ICs optimized for CoolGaN™ GIT HEMTs. Practical application examples and circuit schematics complement the paper.
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Featured products
650V CoolSiC™ MOSFETs
Key feature
- Superior Gate oxide reliability
- Optimized switching behaviour at high currents
- Lower Rdson dependency on temperature
- Intrinsic diode with low reverse recovery charge
- Wide VGS operating range. 0V turn-off
- Fully qualified according to JEDEC for Industrial Applications
Target application
- Telecom and Server SMPS
- UPS (uninterruptable power supplies)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formtion
- Class D amplifiers
650 V G6 CoolSiC™ Schottky diode
Key feature
- The lowest V F: 1.25V
- Best-in-class figure of merit (Q c x V F)
- No reverse recovery charge
- Temperature independent switching behavior
- High dv/dt ruggedness
- Optimized thermal behavior
Target application
- Telecom/server SMPS
- Solar
- PC power
- Lighting
600V CoolGaN™ GIT HEMTs
Key feature
- Enhancement mode transistor – Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Qualified for industrial applications according to JEDEC
- Standards (JESD47 and JESD22)
Target application
- Server
- Telecom
- Wireless Charging
- Audio
- Charger and Adapter
600V CoolGaN™ IPS
Key feature
- Two GaN switches in a half-bridge power stage configuration with dedicated gate drivers
- Isolated digital input with digital-in, power-out building block
- Application configurable switching behavior
- Fast, highly accurate, and stable timing
- Thermally enhanced 8x8mm QFN-28 and 6x8mm QFN-26 packages
Target application
- Charger and Adapters
- Server, telecom & networking SMPS
- Low-power motor drive
- LED lighting
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