Print Page
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF130
Order Code664054
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id14A
Drain Source On State Resistance0.21ohm
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation75W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The IRF130 is a 100V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse energy and diode recovery dv/dt capability using Hi-Rel technology.
- Simple drive requirement
- Repetitive avalanche rating
- Easy to parallel
Applications
Power Management, Motor Drive & Control, Audio, Aerospace, Defence, Military
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-204AA
Rds(on) Test Voltage
10V
Power Dissipation
75W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.21ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01134